-
1 ионное легирование
-
2 легирование методом ионной имплантации
Русско-английский физический словарь > легирование методом ионной имплантации
-
3 ионное легирование
1) Engineering: implant, implant doping, implantation, implantation doping, implantation process (примесей), ion implantation, ion implantation doping, ion implantation process, ion-beam implantation, ion-implantation process2) Microelectronics: all-ion-implant process, ion-implant doping, ion-implantation doping, ion-implantation processing3) Solar energy: ion-assisted dopingУниверсальный русско-английский словарь > ионное легирование
-
4 ионная имплантация
1) Engineering: implant, implant doping, implantation, implantation doping, implantation process, ion implantation, ion implantation doping, ion-beam implantation, ion-implantation process2) Microelectronics: all-ion-implant process, ion-implant doping, ion-implantation doping, ion-implantation processingУниверсальный русско-английский словарь > ионная имплантация
-
5 ионно-имплантационное легирование
Electronics: ion-implantation dopingУниверсальный русско-английский словарь > ионно-имплантационное легирование
-
6 легирование методом ионной имплантации
Electronics: ion-implantation dopingУниверсальный русско-английский словарь > легирование методом ионной имплантации
См. также в других словарях:
Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… … Wikipedia
Plasma-immersion ion implantation — (PIII) [cite book | title = Materials Science of Thin Films | author = Milton Ohring | publisher = Academic Press | year = 2002 | isbn = 0125249756 | url = http://books.google.com/books?id=SOt yFjV xwC pg=PA267… … Wikipedia
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
Collision cascade — A classical molecular dynamics computer simulation of a collision cascade in Au induced by a 10 keV Au self recoil. This is a typical case of a collision cascade in the heat spike regime. Each small sphere illustrates the position of an atom, in… … Wikipedia
Wafer (electronics) — Polished 12 and 6 silicon wafers. The flat cut into the right wafer indicates its doping and crystallographic orientation (see below) … Wikipedia
Microfabrication — Synthetic detail of a micromanufactured integrated circuit through four layers of planarized copper interconnect, down to the polysilicon (pink), wells (greyish) and substrate (green) Microfabrication is the term that describes processes of… … Wikipedia
Silvaco — Infobox Company company name = Silvaco International company company type = Private Company| foundation = 1984 location = key people = Dr Ivan Pesic, President/CEO industry = Software Programming homepage = [http://www.silvaco.com/… … Wikipedia
Dopant — This article is about elemental impurities. For the fictional characters in Kamen Rider W, see Dopant (Kamen Rider). A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations)… … Wikipedia
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Ионная имплантация — Схема установки для ионной имплантации и селекции ионов по энергии. Ионная имплантация способ введения атомов примесей в поверхностный слой пластины или эпитаксиальной пленки путем бомбардировки ег … Википедия